Description
MPH-005 Solved Assignment 2026 Available
Assignment Code: MPH-005/TMA/2026
Note: Attempt all questions. The marks for each question are indicated against it.
PART A
1. a) Describe various electron-hole pair generation processes in semiconductor.
b) Explain the complete switching ON and OFF cycle of a power diode with the help of appropriate diagram. What are forward and reverse recovery times of a power diode?
c) How can the efficiency of a solar cell be increased? How is the optimum bandgap chosen for the solar cell material?
2. a) Describe the difference between the construction and operation of enhancemerit mode and depletion mode MOSFET.
b) What are the causes of non-ideal characteristics of a p-n junction diode?
3. a) Define intrinsic stand-off ratio of a UJT. Draw and explain the I-V characteristic of UJT
b) In single ended input-single ended output configuration of a differential amplifier, the input voltage is 10 mV. If the collector resistors R CT =R C2 =47k Omega, emitter resistor R_{e} = 39kg and supply voltage 18 plus/minus 12 * V calculate the differential gain and output voltage of the circuit. Assume that the you are using Si transistors
4 a) Draw the lead-lag network of Wien bridge oscillator and obtain the expression for its oscillation frequency and required amplifier gain using time domain analysis
b) Draw and explain the equivalent LCR resonant circuit of an oscillating crystal A crystal has C = 0.04pF L = 1H R-2 ko. Calculate its series resonant frequency. What is the effect of the crystal thickness on its frequency?
c)Describe the construction of Gunn diode. Explain with the help of E-k diagram the origin of negative resistance region in its /-V characteristics.
PART B
5. a) Design and draw the circuit using op amps to solve the following simultaneous equations:
3x + 4y = 12
x – 4y = 20



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